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Same model may have multiple batches, images only for reference.
IRF7389TR Real Image
Same model may have multiple batches, images only for reference.

IRF7389TR

Part No IRF7389TR
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description Generation v technology | MOSFET N/P-CH 30V 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N and P-Channel
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 30V
Rds On (Maximum) at Id, Vgs 29mOhm at 5.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 33nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 650pF at 25V
Maximum Power 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187246-IRF7389TR
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7389TR CAD Model

Description

The Infineon Technologies 1187246-IRF7389TR is a high-quality N and P-channel transistor that is ideal for use in a wide range of electronic applications.

  • Power: 2.5W
  • Vds - Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5.8A
  • Packaging: tape and reel
  • Mounting Style: SMD
  • Supply and Demand: sufficient
  • Manufacturer Pack Quantity: 4,000

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0443 $62.6580
120+ $0.9769 $117.2280
185+ $0.9433 $174.5105
265+ $0.8759 $232.1135
345+ $0.8422 $290.5590
430+ $0.8085 $347.6550
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Availability: 62,530 pieces
MOQ: 60 pcs
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