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Same model may have multiple batches, images only for reference.
IRF7342PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7342PBF

Part No IRF7342PBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description HEXFET® Power MOSFET (VDSS = -55V , RDS(on) = 0.105Ω) | MOSFET 2P-CH 55V 3.4A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 3.4A
Rds On (Maximum) at Id, Vgs 105mOhm at 3.4A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 38nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 690pF at 25V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Family Part Number IRF7342PBF
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187231-IRF7342PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7342PBF CAD Model

Description

The Infineon Technologies IRF7342PBF is a dual P-channel MOSFET transistor, designed for use in applications where high power is required.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 3.4A
  • Gate: logic level
  • Package: 8-SO
  • Mounting: surface mount
  • Operating Temperature: -55°C to 150°C
  • Choice: popular for high power applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3485 $50.5325
310+ $0.3265 $101.2150
480+ $0.3155 $151.4400
685+ $0.2934 $200.9790
890+ $0.2824 $251.3360
1,110+ $0.2714 $301.2540
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Availability: 47,200 pieces
MOQ: 145 pcs
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