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IRF5803TR

Name: IRF5803TR
Brand: Infineon Technologies
SKU: 710485
Availability: InStock
Rating: 4.84 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IRF5803TR
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	MOSFET P-CH 40V 3.4A 6-TSOP
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tape and Reel
Status	Obsolete
Transistor Polarity	P-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	40V
Id - Continuous Drain Current	3.4A
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Maximum) at Id, Vgs	112mOhm at 3.4A, 10V
Gate Source Voltage(th) (Maximum) at Id	3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	37nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	1110pF at 25V
Power Dissipation (Maximum)	2W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	Micro6(TSOP-6)
Manufacturer Package	SOT-23-6 Thin, TSOT-23-6
Manufacturer Pack Quantity	3,000
MSL Level	1 (Unlimited)
Win Source Part Number	710485-IRF5803TR
Popularity	Low
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF5803TR CAD Model

Description

The Infineon Technologies MOSFET is a discrete semiconductor product that is packaged in a Micro6(TSOP-6) case/package.

GPTDescription: It is a P-channel polarity MOSFET with a power dissipation (maximum) of 2W.
GPTDescription: The drive voltage (max Rds On, min Rds On) is 4.5V, 10V.
GPTDescription: This product is now obsolete and has a low popularity.
GPTDescription: The Infineon Technologies MOSFET has a Vds - Drain-Source Breakdown Voltage of 40V and an Id - Continuous Drain Current of 3.4A.
GPTDescription: The Rds On (maximum) @ Id, Vgs is 112mOhm @ 3.4A, 10V.
GPTDescription: The gate source voltage(th) (maximum) @ Id is 3V @ 250μA, and the gate charge (Qg) (maximum) @ Vgs is 37nC @ 10V.
GPTDescription: The gate source voltage (maximum) is ±20V, and the input capacitance (Ciss) (maximum) @ Vds is 1110pF @ 25V.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
360+	$0.1402	$50.4720
870+	$0.1150	$100.0500
1,350+	$0.1114	$150.3900
1,860+	$0.1078	$200.5080
2,400+	$0.1042	$250.0800
3,210+	$0.0935	$300.1350

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 150,000 pieces

MOQ: 360 pcs

Order Increment : 1 pcs

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