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IRF530NS

Part No IRF530NS
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 100V 17A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 17A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 90mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 37nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 920pF at 25V
Power Dissipation (Maximum) 3.8W, 70W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187049-IRF530NS
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRF530NS CAD Model

Description

The Infineon Technologies IRF530NS is an obsolete component that is suitable for use in power management.

  • Manufacturer: Infineon Technologies
  • MOSFET: N-Channel transistor polarity
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 17A
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Status: Obsolete
  • Supply and demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4008 $50.1000
270+ $0.3755 $101.3850
415+ $0.3628 $150.5620
595+ $0.3374 $200.7530
770+ $0.3247 $250.0190
965+ $0.3121 $301.1765
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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