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IRF3711STRRPBF

Part No IRF3711STRRPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 20V 110A D2PAK
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Packaging Reel
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 6mOhm at 15A, 10V
Vgs(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 44nC at 4.5V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2980pF at 10V
Power Dissipation (Maximum) 3.1W , 120W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805486-IRF3711STRRPBF
Ultra Librarian 3D Model Ultra Librarian IRF3711STRRPBF CAD Model

Description

The Infineon Technologies IRF3711STRRPBF MOSFET is a through-hole transistor with a drain-to-source voltage (Vdss) of 20V and a continuous drain current (ID) of 110A.

  • Maximum power dissipation: 3.1W
  • Rds On (Maximum): 6mOhm @ 15A, 10V
  • Package: D2PAK
  • Leads: 2
  • Tab: Yes
  • Maximum gate-source voltage: ±20V
  • Input capacitance (Ciss) (Maximum): 2980pF @ 10V
  • Gate charge (Qg) (Maximum): 44nC @ 4.5V
  • RoHS compliant: Yes
  • Temperature range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3222 $57.9960
440+ $0.2645 $116.3800
680+ $0.2564 $174.3520
935+ $0.2483 $232.1605
1,210+ $0.2391 $289.3110
1,615+ $0.2148 $346.9020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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