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Same model may have multiple batches, images only for reference.
IRF3415STRR Real Image
Same model may have multiple batches, images only for reference.

IRF3415STRR

Part No IRF3415STRR
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Advanced Process Technology | MOSFET N-CH 150V 43A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 150V
Id - Continuous Drain Current 43A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 42mOhm at 22A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 200nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2400pF at 25V
Power Dissipation (Maximum) 3.8W, 200W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 1186966-IRF3415STRR
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3415STRR CAD Model

Description

The Infineon Technologies IRF3415STRR is an N-channel MOSFET transistor designed for use in a wide range of applications, including power supplies, motor control, and other electronic devices.

  • Package: D2PAK package
  • Maximum Power Dissipation: 3.8W
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 43A
  • Popularity: medium
  • Supply and Demand Status: balanced in the open market
  • Suitability: suitable for use in high-power applications that require a high level of reliability and performance

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