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IRF3315S

Name: IRF3315S
Brand: Infineon Technologies
SKU: 604275
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRF3315S
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A) \| MOSFET N-CH 150V 21A D2PAK
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	150V
Id - Continuous Drain Current	21A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	82mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	95nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	1300pF at 25V
Power Dissipation (Maximum)	3.8W, 94W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	SMD
Supplier Device Package	D2PAK
Manufacturer Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1186963-IRF3315S
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF3315S CAD Model

Description

The Infineon Technologies MOSFET is a N-channel transistor designed for use in discrete semiconductor products.

Drive Voltage: 10V
Maximum Power Dissipation: 3.8W
Vds: 150V
Id: 21A
Maximum Rds On @ 12A, 10V: 82mOhm
Gate Charge (Qg) @ 10V: 95nC
Input Capacitance (Ciss) @ 25V: 1300pF
Package: D2PAK with 2 leads and a tab, TO-263-3, and TO-263AB

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
60+	$0.8602	$51.6120
145+	$0.7059	$102.3555
220+	$0.6838	$150.4360
305+	$0.6617	$201.8185
395+	$0.6397	$252.6815
525+	$0.5735	$301.0875

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 6,578 pieces

MOQ: 60 pcs

Order Increment : 1 pcs

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