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IPG20N06S4L11ATMA2

Part No IPG20N06S4L11ATMA2
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET_)40V 60V)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4020pF @ 25V
Power - Max 65W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10
Base Product Number IPG20N
Standard Package 5,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 971814-IPG20N06S4L11ATMA2
Ultra Librarian 3D Model Ultra Librarian IPG20N06S4L11ATMA2 CAD Model

Description

The IPG20N06S4L11ATMA2 is an active MOSFET array from Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • Application: Automotive
  • Channel Type: Dual N-channel
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 20A @ 25°C
  • Rds On (Max): 11.2mOhm @ 17A and 10V
  • Gate Charge (Qg): 53nC @ 10V
  • Input Capacitance (Ciss): 4020pF @ 25V
  • Mounting Type: Surface Mount
  • Feature: Wettable Flank

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6058 $56.2030
80+ $1.3176 $105.4080
120+ $1.2765 $153.1800
165+ $1.2353 $203.8245
210+ $1.1941 $250.7610
285+ $1.0706 $305.1210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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