The IPG16N10S4-61 is a dual N-Channel MOSFET transistor array from Infineon Technologies.

• Series: It belongs to the OptiMOS™ series of transistors, designed for power electronics applications.
• Drain-Source Voltage (Vdss): The IPG16N10S4-61 has a drain-source voltage (Vdss) of 100V
• Continuous Drain Current (Id): and a continuous drain current (Id) of 16A @ a case temperature of 25°C.
• Maximum On-Resistance (Rds On): It has a maximum on-resistance (Rds On) of 61mOhm @ a drain current of 16A and a gate-source voltage of 10V.
• Gate-Source Threshold Voltage (Vgs(th)): This MOSFET transistor array has a gate-source threshold voltage (Vgs(th)) of 3.5V @ a drain current of 9μA.
• Maximum Power Dissipation: The IPG16N10S4-61 can dissipate a maximum power of 29W @ a case temperature of 25°C.
• Suitability: It is suitable for use in various power electronic applications, such as motor control, power supplies, and inverters.
• Status: The IPG16N10S4-61 is an active product and readily available for purchase.