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Same model may have multiple batches, images only for reference.
IPD090N03L G Real Image
Same model may have multiple batches, images only for reference.

IPD090N03L G

Part No IPD090N03L G
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 30V 40A TO252-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Standard Package 1
Category Discrete Semiconductor Products
Family FETs - Single
Series OptiMOS
Packaging Reel
FET Type MOSFET N-Channel Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Rds On (Max) @ Id Vgs 9 mOhm @ 30A 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) @ Vds 1600pF @ 15V
Power - Max 42W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style SMD/SMT
Package TO-252-3 DPak (2 Leads + Tab) SC-63
Manufacturer Device Package PG-TO252-3
Win Source Part Number 068985-IPD090N03L G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD090N03L G CAD Model

Description

The Infineon Technologies IPD090N03L G is a MOSFET N-channel metal oxide FET suitable for use in discrete semiconductor products.

  • Type: MOSFET N-channel metal oxide FET
  • Series: OptiMOS
  • Package: TO-252-3 DPak (2 Leads + Tab) SC-63 case
  • Vdss: 30V
  • Supply and demand status: balanced

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Quantity Unit Price Ext. Price
90+ $0.5665 $50.9850
220+ $0.4648 $102.2560
335+ $0.4503 $150.8505
460+ $0.4357 $200.4220
595+ $0.4212 $250.6140
795+ $0.3777 $300.2715
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Availability: 3,550 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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