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IPB60R060P7ATMA1

Part No IPB60R060P7ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 48A D2PAK / N-Channel 650 V 48A (Tc) 164W (Tc) Surface Mount PG-TO263-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2895 pF @ 400 V
Power Dissipation (Max) 164W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB60R060
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPB60R060P7,IPB60R060P7ATMA1DKR,IPB60R060P7ATMA1-ND,IPB60R060P7ATMA1TR,IPB60R060P7ATMA1CT,SP001664882
Standard Package 1,000
Win Source Part Number 969932-IPB60R060P7ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB60R060P7ATMA1 CAD Model

Description

The IPB60R060P7ATMA1 is a N-channel MOSFET transistor from Infineon's CoolMOS P7 series.

  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 48A @ 25°C
  • Maximum Rds On: 60mOhm @ 15.9A
  • Gate Charge: 67nC @ 10V
  • Package: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.4251 $51.9757
17+ $6.0924 $103.5708
26+ $5.9021 $153.4546
36+ $5.7117 $205.6212
46+ $5.5213 $253.9798
61+ $4.9501 $301.9561
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,523 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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