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Same model may have multiple batches, images only for reference.
IMZA65R030M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMZA65R030M1HXKSA1

Part No IMZA65R030M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET, PG-TO247
Datasheet
IMZA65R030M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202967-IMZA65R030M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Drive Voltage (Max Rds On, Min Rds On) 18V
Mounting Type Through Hole
Ultra Librarian 3D Model Ultra Librarian IMZA65R030M1HXKSA1 CAD Model

Description

The Infineon Technologies CoolSiC™ is a single N-Channel SiCFET (Silicon Carbide Field Effect Transistor) with a drain to source voltage (Vdss) of 650V.

  • Category: Discrete Semiconductor Products, Transistors, MOSFETs
  • Series: CoolSiC™
  • Max Rds On, Min Rds On: 18V
  • Package Type: Tube
  • Mounting Type: Through Hole
  • Status: Active
  • Manufacturer: Infineon Technologies

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2+ $32.1751 $64.3502
5+ $26.4001 $132.0005
7+ $25.5751 $179.0257
10+ $24.7500 $247.5000
13+ $23.9251 $311.0263
17+ $21.4500 $364.6500
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Availability: 82 pieces
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