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Same model may have multiple batches, images only for reference.
IMBG65R030M1HXTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMBG65R030M1HXTMA1

Part No IMBG65R030M1HXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET PG-TO263-
Datasheet
IMBG65R030M1HXTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202795-IMBG65R030M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSiC™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-12
Ultra Librarian 3D Model Ultra Librarian IMBG65R030M1HXTMA1 CAD Model

Description

The Infineon Technologies CoolSiC™ MOSFET is a high-performance N-channel FET that utilizes silicon carbide (SiC) technology.

  • Channel Type: N-channel
  • Drain-to-Source Voltage (Vdss): 650 V
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-12
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.7815 $63.1260
9+ $12.9489 $116.5401
14+ $12.5444 $175.6216
20+ $12.1397 $242.7940
25+ $11.7350 $293.3750
33+ $10.5210 $347.1930
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Availability: 18 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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