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IKD06N60RF

Name: IKD06N60RF
Brand: Infineon Technologies
SKU: 156387
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IKD06N60RF
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	IGBT 600V 12A 100W PG-TO252-3
Datasheet	IKD06N60RF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
IGBT Type	Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage	600V
Maximum Current Collector	12A
Pulsed Collector Current	18A
Collector-emitter saturation voltage(Max)	2.5V @ 15V, 6A
Maximum Power Dissipation	100W
Total Switching Energy(Ets)	90μJ (on), 90μJ (off)
Input Type	Standard
Gate Charge	48nC
Turn-on and Turn-off delay time	7ns/106ns
Testing Conditions	400V, 6A, 23 Ohm, 15V
Reverse Recovery Time (trr)	48ns
Temperature Range - Operating	-40°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO252-3
Win Source Part Number	068787-IKD06N60RF
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IKD06N60RF CAD Model

Description

The Infineon Technologies 068787-IKD06N60RF is a Trench Field Stop IGBT with a maximum collector-emitter breakdown voltage of 600V and a maximum power dissipation of 100W.

Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 100W
Maximum Current Collector: 12A
Pulsed Collector Current: 18A
Reverse Recovery Time: 48ns
Gate Charge: 48nC
Junction Temperature Range: -40°C to 175°C
Package: PG-TO252-3
Category: Discrete Semiconductor Products
Popularity: Medium

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
125+	$0.4008	$50.1000
270+	$0.3755	$101.3850
415+	$0.3628	$150.5620
595+	$0.3374	$200.7530
770+	$0.3247	$250.0190
965+	$0.3121	$301.1765

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 50,000 pieces

MOQ: 125 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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