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Same model may have multiple batches, images only for reference.
IKB20N60H3ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IKB20N60H3ATMA1

Part No IKB20N60H3ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 40A 170W TO263-3
Datasheet
IKB20N60H3ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 40A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 20A
Maximum Power Dissipation 170W
Total Switching Energy(Ets) 690μJ
Input Type Standard
Gate Charge 120nC
Turn-on and Turn-off delay time 16ns/194ns
Testing Conditions 400V, 20A, 14.6 Ohm, 15V
Reverse Recovery Time (trr) 112ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3
Win Source Part Number 1045263-IKB20N60H3ATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IKB20N60H3ATMA1 CAD Model

Description

The Infineon Technologies IKB20N60H3ATMA1 is an IGBT transistor with a trench field stop and standard input type.

  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Win Source Part Number: 1045263
  • Maximum Current Collector: 40A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 170W
  • Total Switching Energy (Ets): 690μJ

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