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Same model may have multiple batches, images only for reference.
IHW40T120FKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IHW40T120FKSA1

Part No IHW40T120FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 75A 270W TO247-3
Datasheet
IHW40T120FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 75A
Pulsed Collector Current 105A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 40A
Maximum Power Dissipation 270W
Total Switching Energy(Ets) 6.5mJ
Input Type Standard
Gate Charge 203nC
Turn-on and Turn-off delay time 48ns/480ns
Testing Conditions 600V, 40A, 15 Ohm, 15V
Reverse Recovery Time (trr) 195ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045258-IHW40T120FKSA1
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 240
Ultra Librarian 3D Model Ultra Librarian IHW40T120FKSA1 CAD Model

Description

The Infineon Technologies IHW40T120FKSA1 is a trench field stop IGBT designed for use in discrete semiconductor products.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 75A
  • Reverse Recovery Time: 195ns
  • Collector-Emitter Saturation Voltage: 2.3V @ 15V and 40A
  • Package: PG-TO247-3
  • Mounting: Through Hole
  • Maximum Power Dissipation: 270W
  • Total Switching Energy: 6.5mJ

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