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Same model may have multiple batches, images only for reference.
IGW50N60H3FKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IGW50N60H3FKSA1

Part No IGW50N60H3FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 100A 333W TO247-3
Datasheet
IGW50N60H3FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 100A
Pulsed Collector Current 200A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 50A
Maximum Power Dissipation 333W
Total Switching Energy(Ets) 2.36mJ
Input Type Standard
Gate Charge 315nC
Turn-on and Turn-off delay time 23ns/235ns
Testing Conditions 400V, 50A, 7 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045152-IGW50N60H3FKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IGW50N60H3FKSA1 CAD Model

Description

The Infineon Technologies 1045152-IGW50N60H3FKSA1 is a trench field stop IGBT designed for use in discrete semiconductor products.

  • Maximum Current Collector: 100A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 333W
  • Collector-Emitter Saturation Voltage(Max): 2.3V @ 15V, 50A
  • Total Switching Energy(Ets): 2.36mJ
  • Turn-On Delay Time: 23ns
  • Turn-Off Delay Time: 235ns
  • Testing Conditions: 400V, 50A, 7 Ohm, 15V
  • Package: PG-TO247-3
  • Mounting Type: Through-hole

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