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Same model may have multiple batches, images only for reference.
IGB30N60H3ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IGB30N60H3ATMA1

Part No IGB30N60H3ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 60A 187W TO263-3
Datasheet
IGB30N60H3ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 30A
Maximum Power Dissipation 187W
Total Switching Energy(Ets) 1.17mJ
Input Type Standard
Gate Charge 165nC
Turn-on and Turn-off delay time 18ns/207ns
Testing Conditions 400V, 30A, 10.5 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3
Win Source Part Number 1045133-IGB30N60H3ATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IGB30N60H3ATMA1 CAD Model

Description

The Infineon Technologies IGB30N60H3ATMA1 is a high power IGBT transistor designed for applications such as motor control and power supplies.

  • Maximum Collector Current: 60A
  • Collector-Emitter Breakdown Voltage: 600V
  • Package: TO-263-3
  • Mounting: easy to mount on a PCB

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46+ $2.5666 $118.0636
70+ $2.4865 $174.0550
96+ $2.4063 $231.0048
125+ $2.3261 $290.7625
167+ $2.0855 $348.2785
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