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HYB25D512400BR-7

Part No HYB25D512400BR-7
Manufacturer Infineon Technologies
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1017248-HYB25D512400BR-7
Categories OEM Parts(F-I)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian HYB25D512400BR-7 CAD Model

Description

The HYB25D512400BR-7 is a 512Mb Double Data Rate (DDR) SDRAM (Synchronous Dynamic Random-Access Memory) manufactured by Infineon Technologies (now part of Infineon). This memory chip is designed for applications requiring high bandwidth and fast data transfer rates.

Applications:

  • Desktop and Laptop Computers
  • Graphics Cards
  • Networking Equipment (Routers, Switches)
  • Digital Signal Processing (DSP) Systems
  • Embedded Systems requiring high-speed memory
  • Gaming Consoles

Features:

  • Capacity: 512Mb (64M x 8)
  • DDR Technology: Doubles the data transfer rate compared to single data rate SDRAM.
  • Clock Frequency: Typically operates at a clock frequency up to 143 MHz, resulting in a data transfer rate of 286 MHz.
  • Supply Voltage: 2.5V
  • Interface: JEDEC standard DDR interface
  • Package: Typically available in a TSOP (Thin Small Outline Package) or FBGA (Fine-Pitch Ball Grid Array) package.
  • CAS Latency (CL): 2 or 2.5

Benefits:

  • High Bandwidth: DDR technology provides a significant increase in bandwidth, enabling faster data transfer rates.
  • Improved System Performance: Fast memory access times improve overall system performance.
  • Reduced Power Consumption: DDR technology typically consumes less power compared to older SDRAM technologies.
  • Standard Interface: JEDEC standard interface ensures compatibility with a wide range of systems.

Additional Details:

The HYB25D512400BR-7 is designed to operate at a supply voltage of 2.5V. It supports various memory operations, including read, write, and refresh cycles. The device utilizes a double data rate architecture, where data is transferred on both the rising and falling edges of the clock signal. The CAS latency (CL) is a measure of the delay between the time a read command is issued and the time the data is available on the output pins.

This DDR SDRAM chip is commonly used in applications where high memory bandwidth is critical for performance. Its speed and efficiency make it a suitable choice for demanding applications such as graphics processing, video editing, and high-performance computing.

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