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Same model may have multiple batches, images only for reference.
FF200R12KT4HOSA1 Real Image
Same model may have multiple batches, images only for reference.

FF200R12KT4HOSA1

Part No FF200R12KT4HOSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description IGBT MOD 1200V 320A 1100W / IGBT Module Trench Field Stop Half Bridge 1200 V 320 A 1100 W Chassis Mount Module
Datasheet
FF200R12KT4HOSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr Infineon Technologies
Series C
Package Tray
Product Status Active
IGBT Type Trench Field Stop
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 320 A
Power - Max 1100 W
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Current - Collector Cutoff (Max) 5 mA
Input Capacitance (Cies) @ Vce 14 nF @ 25 V
Input Standard
NTC Thermistor No
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Base Product Number FF200R12
Standard Package 10 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 871730-FF200R12KT4HOSA1
Ultra Librarian 3D Model Ultra Librarian FF200R12KT4HOSA1 CAD Model

Description

The FF200R12KT4HOSA1 is an IGBT module from the C series.

  • Maximum Power Rating: 1100 W
  • Configuration: Half Bridge
  • Voltage Breakdown: 1200 V
  • Maximum Collector Current: 320 A
  • Vce(on): 2.15V @ a gate-emitter voltage of 15V and a collector current of 200A
  • Input Capacitance: 14 nF @ a voltage of 25V
  • Mounting: Chassis mount
  • Package: Module
  • Temperature Range: -40°C to 150°C
  • Manufacturer: Infineon Technologies
  • Status: Active

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