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Same model may have multiple batches, images only for reference.
DDB2U30N08VRBOMA1307
Same model may have multiple batches, images only for reference.

DDB2U30N08VRBOMA1307

Part No DDB2U30N08VRBOMA1307
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description IGBT MODULE
Datasheet
DDB2U30N08VRBOMA1307 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr Infineon Technologies
Package Bulk
Product Status Active
Configuration 3 Independent
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 25 A
Power - Max 20 mW
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 20A
Current - Collector Cutoff (Max) 1 mA
Input Capacitance (Cies) @ Vce 880 pF @ 25 V
Input Standard
NTC Thermistor Yes
Temperature Range - Operating -40°C ~ 125°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 888017-DDB2U30N08VRBOMA1307
Ultra Librarian 3D Model Ultra Librarian DDB2U30N08VRBOMA1307 CAD Model

Description

The DDB2U30N08VRBOMA1307 is an IGBT module from Infineon Technologies.

  • Category: Discrete Semiconductor Products
  • Power Rating: 20 mW
  • Package: Bulk
  • Configuration: 3 independent IGBTs
  • Voltage: 600 V
  • Maximum Collector Current (Ic): 25 A
  • Collector-Emitter Breakdown Voltage: 600 V
  • Temperature Range: -40°C to 125°C
  • Features: NTC Thermistor
  • Mounting Type: Chassis Mount
  • Product Status: Active

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