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BSO615N

Part No BSO615N
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET 2N-CH 60V 2.6A 8SOIC / Mosfet Array 60V 2.6A 2W Surface Mount PG-DSO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series SIPMOS®
Package Tape & Reel (TR)Cut Tape (CT)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.6A
Rds On (Max) @ Id, Vgs 150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Power - Max 2W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8
Base Product Number BSO615
Standard Package 2,500 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 572122-BSO615N
Ultra Librarian 3D Model Ultra Librarian BSO615N CAD Model

Description

The BSO615N is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) array belonging to the SIPMOS™ series.

  • Packaging: Tape & Reel
  • Standard Package Quantity: 2,500 pieces
  • Drain-to-Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 2.6A
  • Maximum On-Resistance (Rds On) @ 2.6A and 4.5V: 150mOhm
  • Gate Type: Logic-Level
  • Configuration: Dual N-channel
  • Mounting Type: Surface Mount
  • Package: 8-SOIC
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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