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BSO303P

Name: BSO303P
Brand: Infineon Technologies
SKU: 572113
Availability: InStock
Rating: 4.84 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	BSO303P
Manufacturer	Infineon Technologies
Catalog	FETs - Arrays
Description	P-CHANNEL POWER MOSFET
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Bulk
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8.2A
Rds On (Max) @ Id, Vgs	21mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id	2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	72.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1761pF @ 25V
Power - Max	2W
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	PG-DSO-8
Base Product Number	BSO303
Standard Package	41 pcs
MSL Level	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	572113-BSO303P
Ultra Librarian 3D Model	Ultra Librarian BSO303P CAD Model

Alternative Products

Description

The OptiMOS™ 572113-BSO303P is a high-performance P-Channel MOSFET transistor array designed for various applications in the electronics industry.

Drain to Source Voltage (Vdss): 30V
Continuous Drain Current (Id): 8.2A
Gate Type: Logic Level
Rds On (Max): 21mOhm @ 8.2A and 10V
Package: 8-SOIC
Gate Charge (Qg): 72.5nC @ 10V
Input Capacitance (Ciss): 1761pF @ 25V
Operating Temperature: -55°C to 150°C
Manufacturer: Infineon Technologies

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