BSO211P Real Image
Same model may have multiple batches, images only for reference.

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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.7A
Rds On (Max) @ Id, Vgs 67mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 23.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 15V
Power - Max 2W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8
Base Product Number BSO211
Standard Package 944 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 572111-BSO211P
Ultra Librarian 3D Model Ultra Librarian BSO211P CAD Model

Description

The BSO211P is a dual P-channel MOSFET array from Infineon Technologies.

  • Series: OptiMOS™
  • Gate Feature: Logic Level
  • Drain-to-Source Voltage: 20V
  • Continuous Drain Current: 4.7A @ 25°C
  • Rds On: 67mOhm @ 4.7A and 4.5V
  • Gate Threshold Voltage: 1.2V @ 25μA
  • Maximum Power Dissipation: 2W
  • Mounting: Surface Mount
  • Package: 8-SOIC

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.4325 $64.8750
365+ $0.3549 $129.5385
565+ $0.3441 $194.4165
780+ $0.3329 $259.6620
1,010+ $0.3218 $325.0180
1,350+ $0.2885 $389.4750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 8,000 pieces
MOQ: 10 pcs
Order Increment : 1 piece
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