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BSO211P

Name: BSO211P
Brand: Infineon Technologies
SKU: 572111
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	BSO211P
Manufacturer	Infineon Technologies
Catalog	FETs - Arrays
Description	P-CHANNEL POWER MOSFET
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Bulk
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.7A
Rds On (Max) @ Id, Vgs	67mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	23.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	920pF @ 15V
Power - Max	2W
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	PG-DSO-8
Base Product Number	BSO211
Standard Package	944 pcs
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	572111-BSO211P
Ultra Librarian 3D Model	Ultra Librarian BSO211P CAD Model

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Description

The BSO211P is a dual P-channel MOSFET array from Infineon Technologies.

Series: OptiMOS™
Gate Feature: Logic Level
Drain-to-Source Voltage: 20V
Continuous Drain Current: 4.7A @ 25°C
Rds On: 67mOhm @ 4.7A and 4.5V
Gate Threshold Voltage: 1.2V @ 25μA
Maximum Power Dissipation: 2W
Mounting: Surface Mount
Package: 8-SOIC

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
150+	$0.3862	$57.9300
365+	$0.3169	$115.6685
565+	$0.3072	$173.5680
780+	$0.2972	$231.8160
1,010+	$0.2873	$290.1730
1,350+	$0.2576	$347.7600

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 8,000 pieces

MOQ: 10 pcs

Order Increment : 1 pcs

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