The BSC884N03MS is a OptiMOS™ power MOSFET from Infineon Technologies. It is designed for high-efficiency power conversion and optimized for synchronous rectification in various applications.

Applications

• Synchronous rectification in AC-DC power supplies
• DC-DC converters
• Motor control applications
• Class D audio amplifiers
• High-frequency switching applications

Features

• Optimized for synchronous rectification
• Very low on-resistance R<sub>DS(on)
• Low gate charge Q<sub>g
• Avalanche rated
• Logic level drive
• 100% tested avalanche
• Pb-free lead plating; RoHS compliant

Benefits

• Increased power efficiency due to low R<sub>DS(on), reducing power losses and heat dissipation.
• Improved system reliability with avalanche ruggedness.
• Simplified gate drive requirements with logic level compatibility.
• Reduced system size and cost due to high power density.
• Environmentally friendly due to RoHS compliance.

Additional Details

The BSC884N03MS features a drain-source voltage (V<sub>DS) of 30V and a continuous drain current (I<sub>D) of up to 36A (depending on the case temperature). The typical on-resistance (R<sub>DS(on)) at V<sub>GS = 10V is typically 3.4 mΩ. It is available in a PowerStage 5x6 package. The low gate charge enables high-frequency operation without significant switching losses. This MOSFET is particularly suited for applications where efficiency and power density are critical.

The device is also designed with robust avalanche characteristics, providing additional safety margin in demanding applications. Its optimized design results in minimal ringing and reduced EMI. The 100% avalanche testing ensures high product quality and reliability.