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BSC112N06LDATMA1

Part No BSC112N06LDATMA1
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description TRENCH 40<-<100V / Mosfet Array 60V 20A (Tc) 65W (Tc) Surface Mount PG-TDSON-8-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series OptiMOS™-T2
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4020pF @ 30V
Power - Max 65W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4
Base Product Number BSC112
Standard Package 5,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 853927-BSC112N06LDATMA1
Ultra Librarian 3D Model Ultra Librarian BSC112N06LDATMA1 CAD Model

Description

The BSC112N06LDATMA1 is a MOSFET (Metal Oxide) integrated circuit (IC) from Infineon Technologies.

  • Series: OptiMOS™-T2
  • Application: FET and MOSFET Array
  • Package: Tape & reel
  • Standard Package: 5,000 pieces
  • Vdss: 60V
  • Id (25°C): 20A
  • Gate Type: Logic Level
  • Rds On: 11.2mOhm @ 17A, 10V
  • Channel Configuration: Dual N-Channel
  • Operating Temperature: -55°C to 175°C
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3232 $52.9280
95+ $1.0857 $103.1415
145+ $1.0518 $152.5110
200+ $1.0178 $203.5600
255+ $0.9839 $250.8945
345+ $0.8821 $304.3245
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 102 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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