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Same model may have multiple batches, images only for reference.
BCM856SE6327BTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BCM856SE6327BTSA1

Part No BCM856SE6327BTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 65V 0.1A SOT363
Datasheet
BCM856SE6327BTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 65V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 250mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 1022645-BCM856SE6327BTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCM856SE6327BTSA1 CAD Model

Description

The Infineon Technologies BCM856SE6327BTSA1 is a dual PNP transistor suitable for various applications, including audio amplifiers, voltage regulators, and power management.

  • Maximum Collector-Emitter Breakdown Voltage: 65V
  • Maximum Power Dissipation: 250mW
  • Typical Gain: 200 @ 2mA, 5V
  • Maximum Collector Cut-Off Current: 15nA
  • Operating Temperature Range: -55°C to 150°C
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2402 $58.8490
585+ $0.1975 $115.5375
905+ $0.1917 $173.4885
1,250+ $0.1848 $231.0000
1,615+ $0.1790 $289.0850
2,160+ $0.1605 $346.6800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,840 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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