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Same model may have multiple batches, images only for reference.
AUIRF9952Q International Rectifier
Same model may have multiple batches, images only for reference.

AUIRF9952Q

Part No AUIRF9952Q
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Datasheet
AUIRF9952Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.5A, 2.3A
Rds On (Max) @ Id, Vgs 100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Power - Max 2W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Product Number AUIRF9952
Standard Package 95 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567121-AUIRF9952Q
Ultra Librarian 3D Model Ultra Librarian AUIRF9952Q CAD Model

Description

The AUIRF9952Q is a HEXFET MOSFET array designed for logic level gate applications.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 3.5A and 2.3A @ 25°C
  • Maximum On-Resistance: 100mOhm @ 2.2A and 10V
  • Mounting: surface mountable
  • Package: 8-SOIC
  • Gate Charge: 14nC @ 10V
  • Input Capacitance: 190pF @ 15V
  • Temperature Range: -55°C to 150°C
  • Manufacturer: Infineon Technologies
  • Status: currently obsolete

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