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Same model may have multiple batches, images only for reference.
AIHD06N60RATMA1 Real Image
Same model may have multiple batches, images only for reference.

AIHD06N60RATMA1

Part No AIHD06N60RATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IC DISCRETE 600V TO252-3
Datasheet
AIHD06N60RATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 12A
Pulsed Collector Current 18A
Collector-emitter saturation voltage(Max) 2.1V @ 15V, 6A
Maximum Power Dissipation 100W
Total Switching Energy(Ets) 110μJ (on), 220μJ (off)
Input Type Standard
Gate Charge 48nC
Turn-on and Turn-off delay time 12ns/127ns
Testing Conditions 400V, 6A, 23 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Win Source Part Number 1045168-AIHD06N60RATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AIHD06N60RATMA1 CAD Model

Description

The Infineon Technologies AIHD06N60RATMA1 is a Trench Field Stop IGBT transistor with a maximum current collector of 12A and a VCEO maximum collector-emitter breakdown voltage of 600V.

  • Current Collector: 12A
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 100W
  • Pulsed Collector Current: 18A
  • Collector-Emitter Saturation Voltage: 2.1V @ 15V and 6A
  • Gate Charge: 48nC
  • Package: PG-TO252-3
  • Temperature Range: -40°C to 175°C
  • Total Switching Energy: 110μJ (on), 220μJ (off)
  • Turn-on Delay Time: 12ns
  • Turn-off Delay Time: 127ns
  • Suitable for: power supplies, motor control, and lighting

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