The 2SD1663 is a silicon NPN epitaxial planar transistor manufactured by Inchange Semiconductor Company Limited. This transistor is designed for use in various amplifier and switching applications. It offers moderate power dissipation and is suitable for applications where a compact and reliable NPN transistor is required.

Applications

• Amplifier circuits
• Switching circuits
• General purpose applications
• Consumer electronics
• Industrial control systems

Features

• NPN Silicon Epitaxial Planar Transistor
• High Collector-Emitter Voltage (VCEO)
• High Collector Current (IC)
• Low Saturation Voltage
• High Transition Frequency
• Excellent hFE Linearity

Benefits

• Provides stable and reliable amplification
• Efficient switching performance
• Suitable for a wide range of applications due to its versatile characteristics
• Reduces power loss in switching applications
• Ensures consistent performance over a wide range of operating conditions
• Allows for optimal circuit design and performance

Additional Details

The 2SD1663 features a collector-emitter voltage (VCEO) typically around 50V, a collector current (IC) of about 1A, and a power dissipation (PD) of approximately 0.8W. Its transition frequency (fT) is generally in the range of 100 MHz, making it suitable for medium-frequency applications. The transistor's current gain (hFE) is typically between 100 and 300, ensuring good amplification characteristics. It is commonly available in a TO-92 or similar small package for easy integration into various circuit designs. The operating and storage junction temperature range is -55°C to +150°C.