The 2SD1390 is an NPN silicon epitaxial transistor manufactured by Inchange Semiconductor Company Limited. It's designed for high-current switching applications, particularly in power amplifiers and DC-DC converters.

Applications

• Power Amplifiers
• DC-DC Converters
• Relay drivers
• Motor control circuits

Features

• High collector current (IC): Up to 3A
• Low saturation voltage (VCE(sat))
• High transition frequency (fT)
• Complementary to 2SB1020

Benefits

• Efficient switching: Low saturation voltage minimizes power loss.
• High gain: Provides sufficient amplification for various applications.
• Versatile application: Suitable for a wide range of power control circuits.

Technical Specifications

The 2SD1390 has a collector-emitter voltage (VCEO) rating of 60V and a collector current (IC) rating of 3A. The collector power dissipation (PC) is 20W. The current gain (hFE) typically ranges from 100 to 320. The transition frequency (fT) is typically 100 MHz. It is available in a TO-126 package. The saturation voltage (VCE(sat)) is typically 0.5V at IC = 2A. The base-emitter voltage (VBE) is typically 1.2V at IC=2A. The operating junction temperature ranges from -55°C to +150°C. Its high collector current capability and low saturation voltage make it an efficient choice for switching applications. The complementary PNP transistor is the 2SB1020, allowing for push-pull amplifier configurations. The robust design ensures reliable operation in demanding environments. This NPN transistor is designed for audio frequency power amplification and switching purposes.