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HY6264ALLJ10TE1

Part No HY6264ALLJ10TE1
Manufacturer Hynix Semiconductor
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 977572-HY6264ALLJ10TE1
Categories OEM Parts(F-I)
Manufacturer Hynix Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian HY6264ALLJ10TE1 CAD Model

Description

The HY6264ALLJ10TE1 is a 64K x 1 bit Low Power CMOS Static RAM (SRAM) manufactured by Hynix Semiconductor (now SK Hynix). This SRAM is designed for applications requiring low power consumption and fast access times. It's commonly used in various memory applications where data retention and quick read/write operations are essential.

Applications

  • Embedded Systems: Used as a memory component in embedded systems for storing program code and data.
  • Battery-Powered Devices: Ideal for battery-powered devices such as handheld instruments and portable medical devices due to its low power consumption.
  • Cache Memory: Employed as cache memory in microprocessor systems to improve performance.
  • Industrial Control Systems: Used in industrial control equipment for data logging and storage.
  • Communication Equipment: Integrated into communication devices for temporary data storage.

Features

  • Low Power Consumption: Designed to minimize power consumption, making it suitable for battery-operated devices.
  • Fast Access Time: Provides fast read and write access times for efficient data processing.
  • CMOS Technology: Utilizes CMOS technology for high performance and low power operation.
  • Single 5V Power Supply: Operates with a single 5V power supply for ease of integration.
  • TTL Compatible Inputs/Outputs: Compatible with TTL logic levels for easy interfacing with other components.

Benefits

  • Extended Battery Life: Low power consumption extends the battery life of portable devices.
  • Improved System Performance: Fast access times enhance the overall performance of microprocessor systems.
  • Simplified Integration: TTL compatibility simplifies the integration process with other digital components.
  • Reliable Data Storage: Provides reliable data storage with minimal power consumption.
  • Wide Operating Voltage Range: Operates within a wide voltage range for flexible application.

Additional Details

The HY6264ALLJ10TE1 SRAM features specific electrical characteristics such as access time, standby current, and operating current. It is designed to operate within a specified temperature range and complies with industry standards for memory devices. The device is available in a standard package for easy mounting on printed circuit boards.

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