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HY57V281620HCLTP-P

Part No HY57V281620HCLTP-P
Manufacturer Hynix Semiconductor
Catalog SD
Description SD 8Mx16-P PC100 CL2 4K
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 945308-HY57V281620HCLTP-P
Series *
Ultra Librarian 3D Model Ultra Librarian HY57V281620HCLTP-P CAD Model

Description

The Hynix HY57V281620HCLTP-P is a 128 Mbit Synchronous DRAM (SDRAM) chip designed for high-performance applications requiring fast data access and significant memory capacity. It is commonly utilized in diverse electronic devices, including personal computers, networking equipment, and embedded systems.

Applications

  • Personal Computers: Used as main memory in desktop and laptop computers.
  • Graphics Cards: Integrated as memory in graphics processing units (GPUs).
  • Networking Devices: Employed in routers, switches, and other network devices for data buffering and processing.
  • Embedded Systems: Incorporated in various embedded systems that demand high-speed memory.
  • Gaming Consoles: Functions as system memory in gaming consoles.

Features

  • Capacity: 128Mbit (8M x 16) memory organization.
  • Data Rate: High data transfer rates for efficient data processing.
  • Synchronous Operation: Operates synchronously with the system clock for enhanced timing and data integrity.
  • Operating Voltage: Typically operates at 3.3V.
  • Package Type: TSOP (Thin Small Outline Package).
  • Clock Frequency: High clock frequency for rapid data access.
  • Refresh Rate: Standard refresh rates to maintain data integrity.

Benefits

  • Increased System Performance: Provides rapid data access, improving overall system responsiveness.
  • High Capacity: Allows for the management of large datasets and complex applications.
  • Reliable Operation: Designed for stable and reliable performance in various operating environments.
  • Simplified System Design: Synchronous operation simplifies the design of memory controllers.
  • Cost-Effective: Offers a cost-effective memory solution for a wide array of applications.

Technical Specifications

The HY57V281620HCLTP-P SDRAM operates at a voltage of 3.3V and adheres to JEDEC standards for SDRAM devices. Its specifications include specific CAS latency settings and burst lengths that can be configured to optimize performance. The device is packaged in a TSOP format for ease of integration into numerous systems. It is designed with standard refresh rates to ensure data integrity and operates within a typical commercial temperature range.

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