The HY57V64420HGT-8 is a high-speed CMOS synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits.

This SDRAM operates with a single 3.3V±0.3V power supply and is packaged in a 54-ball FBGA package. The HY57V64420HGT-8 offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 4-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS logic levels. The HY57V64420HGT-8 is suitable for memory applications where a high bandwidth data rate and a large memory density are required.