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H5TQ4G63EFR-RDN

Part No H5TQ4G63EFR-RDN
Manufacturer Hynix Semiconductor
Catalog DDR
Description DDR3-1866 256Mx16 (4Gb) AAT
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 941750-H5TQ4G63EFR-RDN
Series *
Ultra Librarian 3D Model Ultra Librarian H5TQ4G63EFR-RDN CAD Model

Description

The H5TQ4G63EFR-RDN is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip manufactured by Hynix Semiconductor. It is designed for a range of applications requiring high bandwidth and efficient power management. The 'RDN' likely represents specific timing, temperature, or packaging characteristics relevant to its intended use.

Applications:

  • Desktop computers
  • Laptop computers
  • Gaming consoles
  • Networking devices (routers, switches)
  • Embedded systems

Features:

  • DDR3 Technology: Leverages DDR3 architecture for improved data transfer rates and efficiency.
  • 4Gb Density: Offers a memory capacity of 4 Gigabits (512MB).
  • Operating Frequency: Supports data transfer rates up to 1600 MT/s (Mega Transfers per second), depending on the system configuration and specific grade.
  • Low Voltage: Operates at a standard 1.5V, reducing power consumption and heat generation.
  • FBGA Package: Packaged in a Fine-pitch Ball Grid Array (FBGA) for efficient surface mounting and thermal dissipation.
  • RoHS Compliance: Compliant with RoHS (Restriction of Hazardous Substances) environmental standards.

Benefits:

  • Increased Bandwidth: Provides high bandwidth for demanding applications, resulting in improved system responsiveness and overall performance.
  • Reduced Power Consumption: Low voltage operation minimizes power consumption, extending battery life in portable devices and reducing energy costs.
  • Enhanced Performance: Improves overall system performance by enabling faster memory access and data transfer.
  • Reliable Operation: Manufactured by Hynix, a reputable memory manufacturer, ensuring high reliability and quality.
  • Cost-Effective Solution: Offers a cost-effective memory solution for a variety of applications.

Additional Details:

The H5TQ4G63EFR-RDN is internally organized into banks, allowing for concurrent memory access and improved efficiency. It incorporates features like auto refresh, self refresh, and power-down modes to optimize power management. For detailed specifications, including timing parameters, voltage ranges, and operating temperature ranges, refer to the Hynix Semiconductor datasheet for this specific part number. This DDR3 SDRAM chip is designed for stable and reliable performance in various computing environments.

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