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Same model may have multiple batches, images only for reference.
RFP4N05 Real Image
Same model may have multiple batches, images only for reference.

RFP4N05

Part No RFP4N05
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET / N-Channel 50 V 4A (Tc) 25W (Tc) Through Hole TO-220
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Harris Corporation
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names HARHARRFP4N05,2156-RFP4N05
Standard Package 1
Win Source Part Number 1088242-RFP4N05
Ultra Librarian 3D Model Ultra Librarian RFP4N05 CAD Model

Description

The Harris Corporation RFP4N05 is an N-channel MOSFET transistor designed for use in a variety of applications.

  • Drain to Source Voltage: 50V
  • Continuous Drain Current: 4A @ 25°C
  • Maximum Rds On: 800mOhm @ 4A and 10V
  • Gate Threshold Voltage: 4V @ 250µA
  • Maximum Power Dissipation: 25W @ Tc
  • Package: TO-220-3
  • Input Capacitance: 200 pF @ 25V
  • Operating Temperature: -55°C to 150°C
  • Component Status: Active
  • Packaging: Bulk
  • RoHS: Non-compliant

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