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Same model may have multiple batches, images only for reference.
MJE16002
Same model may have multiple batches, images only for reference.

MJE16002

Part No MJE16002
Manufacturer Harris Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 6V 5A TO220AB / Bipolar (BJT) Transistor NPN 6 V 5 A 80 W Through Hole TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Harris Corporation
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 6 V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1.5A
Current - Collector Cutoff (Max) 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 5A, 5V
Power - Max 80 W
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names HARHARMJE16002,2156-MJE16002
Standard Package 1
Win Source Part Number 1012276-MJE16002
Ultra Librarian 3D Model Ultra Librarian MJE16002 CAD Model

Description

The MJE16002 is a high-performance bipolar transistor that is designed for use in a range of electronic devices.

  • Product: MJE16002
  • Power Max: 80 W
  • Voltage Collector Emitter Breakdown: 6 V
  • Transistor Type: NPN
  • DC Current Gain: 5 @ 5A, 5V

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