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UGB18DCT

Part No UGB18DCT
Manufacturer General Semiconductor
Catalog Electronic Wholesale
Description ULTRAFAST EFFICIENT PLASTIC RECTIFIER
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Rohs State rohs
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Manufacturer General Semiconductor
Win Source Part Number 1276997-UGB18DCT
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UGB18DCT CAD Model

Description

The UGB18DCT is a Dual Common Cathode Ultrafast Rectifier from General Semiconductor. It's designed for high-efficiency rectification in power supplies and other high-frequency applications. This device features ultrafast reverse recovery time, low forward voltage drop, and high surge current capability, making it suitable for demanding power conversion tasks.

Applications:

  • Switch-Mode Power Supplies (SMPS): Used in the secondary side rectification of SMPS.
  • Power Factor Correction (PFC): Employed in PFC circuits for efficient rectification.
  • DC-DC Converters: Suitable for various DC-DC conversion topologies.
  • Freewheeling Diodes: Used as freewheeling diodes in inductive loads.
  • High-Frequency Inverters: Employed in high-frequency inverter circuits.

Features:

  • Ultrafast Reverse Recovery Time: Minimizes switching losses and EMI.
  • Low Forward Voltage Drop: Reduces conduction losses.
  • High Surge Current Capability: Withstands high surge currents.
  • High Reliability: Designed for reliable operation in demanding environments.
  • Dual Common Cathode Configuration: Provides two diodes in a single package with a common cathode.
  • Lead Free Finish/RoHS Compliant

Benefits:

  • High Efficiency: Ultrafast recovery and low forward voltage drop contribute to high overall efficiency.
  • Reduced EMI: Ultrafast recovery minimizes electromagnetic interference.
  • Increased Reliability: High surge current capability enhances device reliability.
  • Simplified Design: Dual diode configuration simplifies circuit design.
  • Improved Thermal Performance: Lower power losses lead to lower operating temperatures.

Additional Details:

The UGB18DCT has a reverse voltage (VR) rating of usually 200V or higher and a forward current (IF) rating of 9A per diode (18A total). It is typically available in a TO-220 or similar through-hole package. The ultrafast reverse recovery time is crucial for minimizing switching losses in high-frequency applications. Proper heat sinking is essential for achieving the full performance and reliability of the UGB18DCT. Datasheets from General Semiconductor provide detailed specifications, application notes, and thermal resistance information. The common cathode configuration is useful in bridge rectifier circuits or other applications where a common cathode connection is required.

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