The ESAD83-004VSCQ-P is a silicon carbide (SiC) Schottky barrier diode from Fuji Electric. It is designed for high-frequency, high-efficiency power conversion applications. SiC diodes offer superior performance compared to traditional silicon diodes due to their lower reverse recovery charge and higher operating temperature capabilities.

Applications:

• Power factor correction (PFC) circuits
• Boost converters
• Motor drives
• Solar inverters
• Switch-mode power supplies (SMPS)

Features:

• Silicon carbide (SiC) material.
• Zero reverse recovery current.
• High surge current capability.
• High operating temperature.
• Low forward voltage drop.

Benefits:

• Increased efficiency in power conversion circuits.
• Reduced switching losses.
• Improved thermal performance.
• Higher reliability.
• Smaller component size.

Specifications:

The ESAD83-004VSCQ-P has a repetitive peak reverse voltage (VRRM) of 400V. The average forward current (IF(AV)) is 8A. The surge current (IFSM) is 80A. The forward voltage drop (VF) is typically 1.5V at IF = 8A. The operating temperature range is -55°C to +175°C. The package is TO-252.