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SSU1N50A

Part No SSU1N50A
Manufacturer Fairchild/ON Semiconductor
Catalog FETs - Single
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Fairchild Semiconductor
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 193739-SSU1N50A
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SSU1N50A CAD Model

Description

The SSU1N50A is a 500V N-Channel MOSFET manufactured by Fairchild/ON Semiconductor. It is designed for high-voltage, high-speed switching applications. This MOSFET offers low gate charge and fast switching speeds, making it suitable for power management and switching circuits.

Applications:

  • Power Supplies: Used in switched-mode power supplies (SMPS) for efficient power conversion.
  • DC-DC Converters: Implemented in DC-DC converters to regulate voltage levels.
  • Motor Control: Utilized in motor control circuits for efficient switching and power management.
  • Lighting Ballasts: Used in electronic ballasts for fluorescent and LED lighting.
  • Inverters: Employed in inverters for converting DC power to AC power.

Features:

  • N-Channel MOSFET: Enhancement-mode N-Channel MOSFET.
  • High Voltage: Rated for 500V drain-source voltage (VDS).
  • Low On-Resistance: Low RDS(on) for reduced power dissipation.
  • Fast Switching Speed: Designed for fast switching performance.
  • Low Gate Charge: Low Qg for efficient gate drive.
  • Avalanche Ruggedness: Capable of withstanding avalanche conditions.

Benefits:

  • High Efficiency: Reduces power losses due to low on-resistance and fast switching.
  • Reliable Performance: Provides stable and reliable operation in high-voltage applications.
  • Reduced Heat Dissipation: Low RDS(on) minimizes heat generation, improving thermal performance.
  • Simplified Circuit Design: Easy to integrate into various power electronic circuits.
  • Improved System Performance: Enhances the overall performance of power supply and motor control systems.

Technical Specifications:

The SSU1N50A features a drain-source voltage (VDS) of 500V, a continuous drain current (ID) of typically around 1A, and a gate-source voltage (VGS) of ±30V. Its on-resistance (RDS(on)) is typically low, contributing to reduced power losses. The device is typically packaged in a TO-251 or TO-252 package for efficient heat dissipation.

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