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Same model may have multiple batches, images only for reference.
SGS10N60RUFD Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

SGS10N60RUFD

Part No SGS10N60RUFD
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 16A 55W TO220F
Datasheet
SGS10N60RUFD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 16A
Pulsed Collector Current 30A
Collector-emitter saturation voltage(Max) 2.8V @ 15V, 10A
Maximum Power Dissipation 55W
Total Switching Energy(Ets) 141μJ (on), 215μJ (off)
Input Type Standard
Gate Charge 30nC
Turn-on and Turn-off delay time 15ns/36ns
Testing Conditions 300V, 10A, 20 Ohm, 15V
Reverse Recovery Time (trr) 60ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Win Source Part Number 064362-SGS10N60RUFD
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SGS10N60RUFD CAD Model

Description

The SGS10N60RUFD is a through-hole IGBT transistor manufactured by Fairchild/ON Semiconductor.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 16A
  • Reverse Recovery Time (trr): 60ns
  • Gate Charge: 30nC
  • Package: TO-220F
  • Maximum Power Dissipation: 55W
  • Turn-On and Turn-Off Delay Time: 15ns/36ns
  • Total Switching Energy (Ets): 141μJ (on), 215μJ (off)
  • Supply and Demand Status: limited

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Quantity Unit Price Ext. Price
65+ $0.9321 $60.5865
155+ $0.7658 $118.6990
235+ $0.7415 $174.2525
325+ $0.7173 $233.1225
420+ $0.6942 $291.5640
560+ $0.6214 $347.9840
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Availability: 15,000 pieces
MOQ: 65 pcs
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