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MTP3055V Real Image
Same model may have multiple batches, images only for reference.

MTP3055V

Part No MTP3055V
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12A TO-220
Datasheet
MTP3055V Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 10nC @ 5V
Max Input Capacitance 570pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 6A, 5V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 045083-MTP3055V
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Motor Drive & Control
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian MTP3055V CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance N-Channel power MOSFET that offers a power dissipation of 48W (Tc) and a drain-source breakdown voltage of 60V.

  • Power Dissipation: 48W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 12A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 10nC @ 5V
  • Maximum Input Capacitance: 570pF @ 25V
  • Package: TO-220-3
  • Mounting Type: Through Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.7029 $66.7755
225+ $0.5767 $129.7575
350+ $0.5588 $195.5800
480+ $0.5407 $259.5360
620+ $0.5226 $324.0120
830+ $0.4685 $388.8550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,080 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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