The MMBT5087NL is a PNP Bipolar Junction Transistor (BJT) designed for low noise and high gain amplification. Manufactured by ON Semiconductor (formerly Fairchild), it's housed in a small SOT-23 package making it suitable for compact designs.
Applications
- Low-noise audio amplifiers
- High-gain amplification stages
- Pre-amplifiers in audio systems
- Instrumentation amplifiers
- General-purpose amplification
Features
- Low noise figure
- High current gain (hFE)
- Low collector-emitter saturation voltage
- Small SOT-23 package
Benefits
- Provides excellent signal amplification with minimal added noise.
- Ensures efficient amplification due to its high current gain.
- Reduces power loss and improves circuit efficiency with its low saturation voltage.
- Space-efficient design for compact electronic devices.
Additional Details
Technical Specifications:
- Collector-Emitter Voltage (VCEO): -30V
- Collector-Base Voltage (VCBO): -30V
- Emitter-Base Voltage (VEBO): -5V
- Collector Current (IC): -0.1A
- Power Dissipation (PD): 0.35W
- DC Current Gain (hFE): 450 - 1350 (at IC = -1 mA, VCE = -5 V)
- Operating and Storage Junction Temperature Range: -55°C to +150°C
The MMBT5087NL's key characteristic is its low noise performance, making it ideal for sensitive audio and instrumentation applications where signal integrity is crucial. The SOT-23 package allows for easy integration into modern surface mount designs.