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Same model may have multiple batches, images only for reference.
HGTP3N60A4D Real Image
Same model may have multiple batches, images only for reference.

HGTP3N60A4D

Part No HGTP3N60A4D
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 17A 70W TO220AB
Datasheet
HGTP3N60A4D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 17A
Pulsed Collector Current 40A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 3A
Maximum Power Dissipation 70W
Total Switching Energy(Ets) 37μJ (on), 25μJ (off)
Input Type Standard
Gate Charge 21nC
Turn-on and Turn-off delay time 6ns/73ns
Testing Conditions 390V, 3A, 50 Ohm, 15V
Reverse Recovery Time (trr) 29ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 001579-HGTP3N60A4D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HGTP3N60A4D CAD Model

Description

The HGTP3N60A4D is a through-hole-mounted IGBT with a reverse recovery time of 29ns and an input type of standard. It has a gate charge of 21nC and operates in a temperature range of -55°C to 150°C. The IGBT has a maximum current collector of 17A and a VCEO maximum collector-emitter breakdown voltage of 600V. It has a total switching energy of 37μJ (on) and 25μJ (off) and a turn-on and turn-off delay time of 6ns/73ns. Its supply and demand status is balanced.

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