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HGTG20N60

Part No HGTG20N60
Manufacturer Fairchild/ON Semiconductor
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Categories Uncategorized
Manufacturer Fairchild/ON Semiconductor
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 824897-HGTG20N60
Ultra Librarian 3D Model Ultra Librarian HGTG20N60 CAD Model

Description

The HGTG20N60 is an insulated gate bipolar transistor (IGBT) manufactured by Fairchild/ON Semiconductor. This device is designed for high-speed switching applications and is commonly used in power electronics circuits. It combines the characteristics of both MOSFETs and bipolar junction transistors (BJTs), offering high input impedance and high current carrying capability.

Applications:

  • Uninterruptible Power Supplies (UPS): Used as switching elements in UPS systems to provide backup power during outages.
  • Motor Control: Employed in variable frequency drives (VFDs) for controlling the speed and torque of electric motors.
  • Induction Heating: Used in high-frequency power supplies for induction heating applications.
  • Welding Equipment: Integrated into welding machines to control the welding current and voltage.
  • Power Factor Correction (PFC): Used in PFC circuits to improve the power factor of electronic devices.

Features:

  • High Switching Speed: Enables efficient operation in high-frequency applications.
  • Low Saturation Voltage: Minimizes power dissipation and improves efficiency.
  • High Input Impedance: Simplifies gate drive circuitry.
  • Avalanche Rated: Designed to withstand avalanche conditions, enhancing reliability.
  • Temperature Compensated: Stable performance over a wide range of temperatures.

Benefits:

  • Improved Efficiency: Reduces power losses and improves the overall efficiency of power electronic systems.
  • Increased Reliability: Provides robust performance in demanding applications.
  • Simplified Design: Easier to design with due to its high input impedance and avalanche rating.
  • Reduced Heat Dissipation: Low saturation voltage minimizes heat generation.
  • Enhanced Performance: Enables high-speed switching and efficient power control.

Additional Details:

The HGTG20N60 typically features a collector-emitter voltage (VCE) rating of 600V and a continuous collector current (IC) rating of 20A. It has a gate-emitter threshold voltage (VGE(th)) typically around 5V. The device is commonly packaged in a TO-247 package, which provides good thermal conductivity. It is designed for operation at frequencies up to several tens of kHz. The HGTG20N60 is a popular choice for power electronic designers due to its excellent performance characteristics and robust design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8492 $64.7220
80+ $1.5177 $121.4160
120+ $1.4703 $176.4360
165+ $1.4230 $234.7950
210+ $1.3756 $288.8760
285+ $1.2335 $351.5475
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Availability: 2,700 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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