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HGTD7N60C3S9A

Part No HGTD7N60C3S9A
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 600V 14A 60000mW 3-Pin(2+Tab) DPAK T/R / IGBT 600V 14A 60W TO252AA
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Not For New Designs
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 14A
Pulsed Collector Current 56A
Collector-emitter saturation voltage(Max) 2V @ 15V, 7A
Maximum Power Dissipation 60W
Total Switching Energy(Ets) 165μJ (on), 600μJ (off)
Input Type Standard
Gate Charge 23nC
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Win Source Part Number 068075-HGTD7N60C3S9A
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 2,500
Family Name HGTD7N60C3S
Introduction Date March 05, 1997
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian HGTD7N60C3S9A CAD Model

Description

The HGTD7N60C3S is a high-performance IGBT from Fairchild/ON Semiconductor. It has a maximum collector-emitter breakdown voltage of 600V, maximum current collector of 14A, and maximum power dissipation of 60W. This IGBT is suitable for use in various applications such as power supplies, motor control, and lighting. The supply and demand status of this IGBT is limited with an estimated EOL date of 2022.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6063 $64.2520
90+ $1.3180 $118.6200
140+ $1.2769 $178.7660
190+ $1.2356 $234.7640
245+ $1.1945 $292.6525
325+ $1.0709 $348.0425
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Availability: 8,390 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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