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Same model may have multiple batches, images only for reference.
FGP5N60LS Real Image
Same model may have multiple batches, images only for reference.

FGP5N60LS

Part No FGP5N60LS
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 10A 83W TO220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
IGBT Type Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 10A
Pulsed Collector Current 36A
Collector-emitter saturation voltage(Max) 3.2V @ 12V, 14A
Maximum Power Dissipation 83W
Total Switching Energy(Ets) 38μJ (on), 130μJ (off)
Input Type Standard
Gate Charge 18.3nC
Turn-on and Turn-off delay time 4.3ns/36ns
Testing Conditions 400V, 5A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Win Source Part Number 067192-FGP5N60LS
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FGP5N60LS CAD Model

Description

The Fairchild/ON Semiconductor FGP5N60LS is a field-stop insulated gate bipolar transistor (IGBT) with a maximum collector-emitter breakdown voltage of 600V and maximum collector current of 10A. It is designed for use in discrete semiconductor products, and is packaged in a TO-220-3 case.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 10A
  • Gate Charge: 18.3nC
  • Collector-Emitter Saturation Voltage: 3.2V @ 12V, 14A
  • Total Switching Energy: 38μJ (on) / 130μJ (off)
  • Turn-On and Turn-Off Delay Times: 4.3ns / 36ns
  • Package Quantity: 800 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
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Availability: 2,145 pieces
MOQ: 90 pcs
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