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Same model may have multiple batches, images only for reference.
FGA70N33BTD Real Image
Same model may have multiple batches, images only for reference.

FGA70N33BTD

Part No FGA70N33BTD
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 330V 149W TO3P
Datasheet
FGA70N33BTD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 330V
Pulsed Collector Current 220A
Collector-emitter saturation voltage(Max) 1.7V @ 15V, 70A
Maximum Power Dissipation 149W
Input Type Standard
Gate Charge 49nC
Reverse Recovery Time (trr) 23ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Win Source Part Number 040289-FGA70N33BTD
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FGA70N33BTD CAD Model

Description

The FGA70N33BTD is a Trench IGBT manufactured by Fairchild/ON Semiconductor.

  • Package: TO-3P
  • Collector-Emitter Breakdown Voltage (Max): 330V
  • Collector-Emitter Saturation Voltage (Max): 1.7V @ 15V, 70A
  • Reverse Recovery Time (trr): 23ns
  • Power Dissipation (Max): 149W
  • Pulsed Collector Current: 220A
  • Supply and Demand Status: Balanced

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