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Same model may have multiple batches, images only for reference.
FGA30N120FTDTU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FGA30N120FTDTU

Part No FGA30N120FTDTU
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 60A 339W TO3P
Datasheet
FGA30N120FTDTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 60A
Pulsed Collector Current 90A
Collector-emitter saturation voltage(Max) 2V @ 15V, 30A
Maximum Power Dissipation 339W
Input Type Standard
Gate Charge 208nC
Reverse Recovery Time (trr) 730ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Win Source Part Number 1038636-FGA30N120FTDTU
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FGA30N120FTDTU CAD Model

Description

The FGA30N120FTDTU is a trench field stop IGBT designed by Fairchild/ON Semiconductor.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 60A
  • Package: TO-3PN
  • Mounting Type: Through Hole
  • Reverse Recovery Time (trr): 730ns
  • Gate Charge: 208nC
  • Maximum Power Dissipation: 339W
  • Pulsed Collector Current: 90A
  • Supply and Demand Status: Sufficient
  • Pieces per Package: 450

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27+ $3.7907 $102.3489
41+ $3.6722 $150.5602
57+ $3.5537 $202.5609
73+ $3.4353 $250.7769
98+ $3.0799 $301.8302
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Availability: 377 pieces
MOQ: 11 pcs
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