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FDS8926ANL

Part No FDS8926ANL
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1058974-FDS8926ANL
Categories OEM Parts(F-I)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FDS8926ANL CAD Model

Description

The FDS8926ANL is a P-Channel PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor) designed for battery management, load switching, and other power management applications in portable devices. It features low on-resistance and fast switching speeds to minimize power losses and improve efficiency.

Applications:

  • Battery Management Systems (BMS)
  • Load Switching in Portable Devices
  • Power Management in Notebook Computers
  • DC-DC Converters

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses, enhancing efficiency.
  • Fast Switching Speed: Reduces switching losses, enabling high-frequency operation.
  • Logic Level Gate Drive: Allows direct control from low-voltage logic circuits.
  • SO-8 Package: Provides a compact footprint for space-constrained applications.

Benefits:

  • Extended Battery Life: Lower power dissipation results in longer battery life in portable devices.
  • Improved Efficiency: Minimizes power loss in switching applications.
  • Simplified Circuit Design: Logic-level gate drive simplifies interfacing with control circuitry.
  • Compact Solution: Small package size enables use in space-sensitive applications.

Additional Details:

The FDS8926ANL is typically available in an SO-8 package. Important specifications include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and on-resistance (RDS(on)) at different gate-source voltages. It's essential to refer to the datasheet for detailed electrical characteristics, thermal performance, and application guidelines. Proper thermal management is critical for reliable operation at higher power levels. The low gate charge (Qg) of the device also contributes to faster switching speeds and reduced gate drive power requirements.

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